Analysis and characterization of thermal transport in GaN HEMTs on Diamond substrates-Reference-Cited by-同舟云学术

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Analysis and characterization of thermal transport in GaN HEMTs on Diamond substrates

Published:2014-05 Issue: Volume: Page:
ISSN:
Container-title:Fourteenth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)
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Author:

Altman David,Tyhach Matthew,McClymonds James,Kim Samuel,Graham Samuel,Cho Jungwan,Goodson Kenneth,Francis Daniel,Faili Firooz,Ejeckam Felix,Bernstein Steven

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6882079/6892251/06892416.pdf?arnumber=6892416

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Progress in the semiconductor/diamond heterogeneous integrations: Technical methods, interfacial phonon transport, and thermal characterizations;Surfaces and Interfaces;2024-03

2. Transient simulations and theoretical modeling of near-junction heat conduction in GaN-on-diamond HEMT;Microelectronics Reliability;2024-01

3. Thermal analysis of an α -Ga2O3 MOSFET using micro-Raman spectroscopy;Applied Physics Letters;2023-11-06

4. A Critical Review of Thermal Boundary Conductance across Wide and Ultrawide Bandgap Semiconductor Interfaces;ACS Applied Materials & Interfaces;2023-06-16

5. Modeling and analyzing near-junction thermal transport in high-heat-flux GaN devices heterogeneously integrated with diamond;International Communications in Heat and Mass Transfer;2023-04

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