Boron Ion Implantation-Induced Embedded Layers for Ultra-Thin Die Structures-Reference-Cited by-同舟云学术

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Boron Ion Implantation-Induced Embedded Layers for Ultra-Thin Die Structures

Published:2023-10-22 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Nanotechnology Materials and Devices Conference (NMDC)
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Author:

Chen Yen Shuo¹,Chiu Tzu Wei²,Ko Yu Chien³,Fan Hua Tai¹,Huang Yi Cheng¹,Ko Fu Hsiang¹

Affiliation:

1. National Yang Ming Chiao Tung University,Department of Materials Science and Engineering,Hsinchu,Taiwan, ROC,30010

2. Seriphy technology corporation, 7F-5 No.168, Sec 2, Fuxing 3rd Rd.,,Zhubei City,Hsinchu,Taiwan, ROC,302

3. National Yang Ming Chiao Tung University, 1001 University Road,Institute of Pioneer Semiconductor Innovation,Hsinchu,Taiwan, ROC,30010

Funder

National Science and Technology Council

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10343386/10343419/10344222.pdf?arnumber=10344222

Reference8 articles.

1. Low Temperature SoIC Bonding and Stacking Technology for 12-/16-Hi High Bandwidth Memory (HBM)

2. Monolithic 3D Integrated Circuits: Recent Trends and Future Prospects

3. Extreme Wafer Thinning and nano-TSV processing for 3D Heterogeneous Integration

4. Boron Doping in Next-Generation Materials for Semiconductor Device

5. Evaluation of secondary electron intensities for dopant profiling in ion implanted semiconductors: a correlative study combining SE, SIMS and ECV methods

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel Single and Co-Ion Implantation Induced Backside Etch Stop Structures for 3D Multilayer Stacked Package;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

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