Novel Single and Co-Ion Implantation Induced Backside Etch Stop Structures for 3D Multilayer Stacked Package-Reference-Cited by-同舟云学术

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Novel Single and Co-Ion Implantation Induced Backside Etch Stop Structures for 3D Multilayer Stacked Package

Published:2024-05-28 Issue: Volume: Page:2184-2188
ISSN:
Container-title:2024 IEEE 74th Electronic Components and Technology Conference (ECTC)
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Author:

Chen Yen-Shuo¹,Chiu Tzu-Wei²,Fan Hua-Tai¹,Ko Yu-Chien³,Chen Chu-Chi⁴,Ko Fu-Hsiang¹

Affiliation:

1. National Yang Ming Chiao Tung University,Department of Materials Science and Engineering,Hsinchu,Taiwan,30010

2. Thinchipway CO., LTD,Hsinchu,Taiwan,30010

3. National Yang Ming Chiao Tung University,Institute of Pioneer Semiconductor Innovation,Hsinchu,Taiwan,30010

4. Taiwan Semiconductor Research Institute,Hsinchu,Taiwan,30010

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10564841/10564831/10564832.pdf?arnumber=10564832

Reference12 articles.

1. Extreme Wafer Thinning and nano-TSV processing for 3D Heterogeneous Integration

2. Buried Power Rails and Back-side Power Grids: Arm® CPU Power Delivery Network Design Beyond 5nm

3. Power from Below: Buried Interconnects Will Help Save Moore's Law

4. Ultra-Thinning of 20 nm-Node DRAMs down to 3 µm for Wafer-on-Wafer (WOW) Applications

5. Challenges of Cu CMP of TSVs and RDLs fabricated from the backside of a thin wafer

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