MOSFETs with ultrashallow junction and minimum drain area formed by using solid-phase diffusion from SiGe-Reference-Cited by-同舟云学术

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MOSFETs with ultrashallow junction and minimum drain area formed by using solid-phase diffusion from SiGe

Published:2001-07 Issue:7 Volume:48 Page:1406-1411
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Uchino T.,Miyauchi A.,Shiba T.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/20128/00930659.pdf?arnumber=930659

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