Ion Implantation for Semiconductor Doping and Materials Modification

Author:

Larson Lawrence A.1,Williams Justin M.1,Current Michael I.2

Affiliation:

1. Ingram School of Engineering, Texas State University at San Marcos, RFM 5210, 601 University Drive, San Marcos, TX 78666, USA

2. Current Scientific, 1729 Comstock Way, San Jose, CA 95124, USA

Abstract

In the 50-plus years since the patent was issued to William Shockley in 1957, ion implantation has become a key process in the commercial production of semiconductor devices, advanced engineering materials and photonic devices. This article reviews the fundamental concepts of production ion implanters for both the processes used in manufacturing and also in the design of the tools themselves. Recent publications in the application areas of semiconductors and materials modification are summarized, focusing on the attendant process effects. These results demonstrate that ion implantation is a well understood technology with abundant and evolving applications.

Publisher

World Scientific Pub Co Pte Lt

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