Comparison of junctionless and inversion-mode p-type metal-oxide-semiconductor field-effect transistors in presence of hole-phonon interactions-Reference-Cited by-同舟云学术

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Comparison of junctionless and inversion-mode p-type metal-oxide-semiconductor field-effect transistors in presence of hole-phonon interactions

Published:2016-01-28 Issue:4 Volume:119 Page:044509
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dib E.¹,Carrillo-Nuñez H.²^ORCID,Cavassilas N.³,Bescond M.³

Affiliation:

1. Dipartimento di Ingegneria dell'Informazione, Università di Pisa, 56122 Pisa, Italy

2. Integrated Systems Laboratory ETH Zürich, Gloriastrasse 35, 8092 Zürich, Switzerland

3. IM2NP, UMR CNRS 6242, Bât. IRPHE, Technopôle de Château-Gombert, 13384 Marseille Cedex 13, France

Funder

Agence Nationale de la Recherche (ANR)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4940959

Reference21 articles.

1. MOSFETs with ultrashallow junction and minimum drain area formed by using solid-phase diffusion from SiGe

2. Technology challenges for integration near and below 0.1 μm

3. Nanowire transistors without junctions

4. Junctionless multigate field-effect transistor

5. Model Order Reduction for Multiband Quantum Transport Simulations and its Application to p-Type Junctionless Transistors

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