Multi-domain Phase-field Modeling of Polycrystalline Hafnia-based (Anti-)ferroelectrics Capable of Representing Defects, Wake-up and Fatigue-Reference-Cited by-同舟云学术

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Multi-domain Phase-field Modeling of Polycrystalline Hafnia-based (Anti-)ferroelectrics Capable of Representing Defects, Wake-up and Fatigue

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
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Author:

Chang Sou-Chi¹,Chae Kisung²,Popovici Mihaela I.³,Lin Chia-Ching¹,Siddiqui Saima¹,Tung I-Cheng¹,Bizindavyi Jasper³,Alpizar Bernal Granados¹,Haratipour Nazila¹,Metz Matthew¹,Kavalieros Jack¹,Kar Gouri S.³,Kummel Andrew²,Cho Kyeongjae⁴,Avci Uygar E.¹

Affiliation:

1. Components Research, Intel Corporation,Hillsboro,OR,USA

2. University of California, San Diego,La Jolla,CA,USA

3. IMEC,Leuven,Belgium

4. University of Texas at Dallas,Richardson,TX,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019540.pdf?arnumber=10019540

Reference14 articles.

1. Time‐Dependent Imprint in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Films

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1. Endurance-Aware Compiler for 3-D Stackable FeRAM as Global Buffer in TPU-Like Architecture;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2024-09

2. Compact Physical Model for Ferroelectric/Antiferroelectric/Dielectric Mixed Phase Capacitors;IEEE Electron Device Letters;2024-02

3. Material, Device and Circuit-Compatible Modeling of Ferroelectric Devices;IEEE Nanotechnology Magazine;2023-08

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