First demonstration of field-free perpendicular SOT-MRAM for ultrafast and high-density embedded memories
Author:
Affiliation:
1. imec, Kapeldreef 75,Leuven,Belgium,3001
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019360.pdf?arnumber=10019360
Reference16 articles.
1. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection
2. Spin currents and spin–orbit torques in ferromagnetic trilayers
3. Determination of spin torque efficiencies in heterostructures with perpendicular magnetic anisotropy
4. Role of an in-plane ferromagnet in a T-type structure for field-free magnetization switching
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