Role of an in-plane ferromagnet in a T-type structure for field-free magnetization switching

Abstract

Deterministic magnetization switching driven by current-induced spin–orbit torque (SOT) without an external magnetic field has potential applications in magnetic random access memory. Here, we realized the field-free magnetization switching in a T-type structure (CoFeB/W/CoFeB), where the two CoFeB layers have perpendicular magnetic anisotropy and in-plane magnetic anisotropy (IMA), respectively. We discovered that the direction of symmetry-breaking field is parallel to the magnetization of the bottom CoFeB (IMA), which cannot be explained by a stray field of this layer. In addition, by placing a 2.5-nm thick insulating layer of MgO between the bottom CoFeB and W layer (CoFeB/MgO/W/CoFeB) to block the interlayer exchange coupling and the spin current from the bottom CoFeB, the field-free SOT switching was still achieved, primarily due to the Néel orange-peel effect in our devices. By using micromagnetic simulations, the roughness of angstrom magnitude was introduced into the model to calculate the symmetry-breaking field, finding a qualitative agreement with experiments. Moreover, we obtained the spin Hall angle of CoFeB ([Formula: see text] = −0.024) by the current-induced hysteresis loop shift method, and the contribution of the effective efficiency χ from the bottom CoFeB was accounted for about 26% of the total in the current-induced SOT switching process. These results indicated that an in-plane ferromagnet layer in the T-type structure provides not only the symmetry-breaking field but also spin current for the field-free SOT magnetization switching.