Heterogeneous 3D Sequential CFET with Ge (110) Nanosheet p-FET on Si (100) bulk n-FET by Direct Wafer Bonding-Reference-Cited by-同舟云学术

Heterogeneous 3D Sequential CFET with Ge (110) Nanosheet p-FET on Si (100) bulk n-FET by Direct Wafer Bonding

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
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Author:

Kim Seong Kwang¹,Lim Hyeong-Rak¹,Jeong Jaejoong¹,Lee Seung Woo¹,Kim Joon Pyo¹,Jeong Jaeyoung¹,Kim Bong Ho¹,Ahn Seung-Yeop¹,Park Youngkeun¹,Geum Dae-Myoung¹,Kim Younghyun²,Baek Yongku¹,Cho Byung Jin¹,Kim Sang Hyeon¹

Affiliation:

1. Korea Advanced Institute of Science and Technology (KAIST),Daejeon,Korea

2. Hanyang University,Ansan,Korea

Funder

Samsung

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019551.pdf?arnumber=10019551

Reference21 articles.

1. Defect reduction by liquid phase epitaxy of germanium on single-crystalline-like germanium templates on flexible, low-cost metal substrates

2. Evaluation of Mobility Degradation Factors and Performance Improvement of Ultrathin-Body Germanium-on-Insulator MOSFETs by GOI Thinning Using Plasma Oxidation

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