18nm FDSOI Enhanced Device Platform for ULP/ULL MCUs-Reference-Cited by-同舟云学术

18nm FDSOI Enhanced Device Platform for ULP/ULL MCUs

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Weber Olivier¹,Min Doohong²,Villaret Alexandre¹,Park Jinha²,Lee Ilmin²,Vandenbossche Eric¹,Kim Dohun²,Yun Jiyoung²,Park Jinwoo²,Lee Minuk²,Kang Jinseok²,Lee Hyunjong²,Choi Youngju²,Kim Inhwan²,Kim Joochan²,Kedar Dhori¹,Janardan Dhori Kedar¹,Haendler Sebastien¹,Elghouli Salim¹,Puget Sophie²,Bernicot Christophe¹,Bernard Emilie¹,Wacquant Francois¹,Nimsgern Fabien¹,Choi Joonhyuk²,Maeda Shigenobu²,Lee Jongho²,Arnaud Franck¹

Affiliation:

1. STMicroelectronics, 850 rue Jean Monnet,Crolles,France,38926

2. Samsung Electronics Co., Ltd., 1 Samsung-ro, Giheung-gu,Foundry Division,,Yongin-city,Gyeonggi-do,Republic of Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019397.pdf?arnumber=10019397

Reference9 articles.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive Study of SER in FDSOI-Planar: 28 nm to 18 nm Scaling Effect and Temperature Dependence;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Comprehensive evaluation of gate-induced drain leakage in SOI stacked nanowire nMOSFETs operating in high-temperatures;Solid-State Electronics;2024-04

3. Electrical characterization of SOI pMOS device leakage;Solid-State Electronics;2023-10

4. Doped Channel SOI pMOS TCAD Description Including Floating Body Effects;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27

5. SOI pMOS drain leakage understanding based on TCAD and measurements;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27