Comprehensive Study of SER in FDSOI-Planar: 28 nm to 18 nm Scaling Effect and Temperature Dependence-Reference-Cited by-同舟云学术

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Comprehensive Study of SER in FDSOI-Planar: 28 nm to 18 nm Scaling Effect and Temperature Dependence

Published:2024-04-14 Issue: Volume: Page:1-5
ISSN:
Container-title:2024 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Uemura Taiki¹,Chung Byungjin¹,Choi Jaehee¹,Lee Seungbae¹,Chung Shinyoung¹,Hwang Yuchul¹,Pae Sangwoo¹

Affiliation:

1. Device Solution, Samsung Electronics, Co., Ltd.,Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529357.pdf?arnumber=10529357

Reference16 articles.

1. Measurement and Reporting of Alpha Particle and Terrestrial Cosmic Ray Induced Soft Error in Semiconductor Devices: JESD89B;JEDEC Sold State Technol. Assoc.,2021

2. Radiation-induced soft error rate analyses for 14 nm FinFET SRAM devices

3. Soft Error Susceptibilities of 22 nm Tri-Gate Devices

4. Investigation of logic circuit soft error rate (SER) in 14nm FinFET technology

5. SER/SEL performances of SRAMs in UTBB FDSOI28 and comparisons with PDSOI and BULK counterparts

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Soft-Error Sensitivity in SRAM Manufactured by Bulk Gate-All-Around (GAA) Technology;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

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