Soft-Error Sensitivity in SRAM Manufactured by Bulk Gate-All-Around (GAA) Technology
Author:
Affiliation:
1. Device Solution, Samsung Electronics, Co., Ltd.,Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529300.pdf?arnumber=10529300
Reference17 articles.
1. Measurement and Reporting of Alpha Particle and Terrestrial Cosmic Ray Induced Soft Error in Semiconductor Devices: JESD89B;JEDEC Sold State Technol. Assoc.,2021
2. 3nm GAA Technology featuring Multi-Bridge-Channel FET for Low Power and High Performance Applications
3. A Study on Soft Error Mitigation for Microprocessor in Bulk CMOS Technology;Uemura;Doctoral Thesis, Osaka University,2015
4. SER/SEL performances of SRAMs in UTBB FDSOI28 and comparisons with PDSOI and BULK counterparts
5. Radiation-induced soft error rate analyses for 14 nm FinFET SRAM devices
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