Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform-Reference-Cited by-同舟云学术

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Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
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Author:

Xie Qingyun¹,Yuan Mengyang¹,Niroula John¹,Greer James A.¹,Rajput Nitul S.²,Chowdhury Nadim³,Palacios Tomas¹

Affiliation:

1. Massachusetts Institute of Technology,Microsystems Technology Laboratories,Cambridge,U.S.A.,MA 02139

2. Technology Innovation Institute,Advanced Materials Research Center,Abu Dhabi,United Arab Emirates,P.O. Box 9639

3. Bangladesh University of Engineering and Technology,Dept. of Electrical and Electronic Engineering,Dhaka-1205,Bangladesh

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019401.pdf?arnumber=10019401

Reference26 articles.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Threshold Voltage Stability Enhancement-Mode GaN p-FETs Fabricated With PEALD-AlN Gate Interfacial Layer;IEEE Electron Device Letters;2024-03

2. Normally-Off p-Channel AlGaN/GaN/AlGaN MESFET With High Breakdown Voltage and Ultra-Low Interface State Density;IEEE Electron Device Letters;2023-12

3. Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation;IEEE Electron Device Letters;2023-07

4. Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN;ACS Applied Electronic Materials;2023-06-08

5. Highly Scaled GaN Complementary Technology on a Silicon Substrate;IEEE Transactions on Electron Devices;2023-04

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