Combined Vramp and TDDB analysis for gate oxide reliability assessment and screening-Reference-Cited by-同舟云学术

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Combined Vramp and TDDB analysis for gate oxide reliability assessment and screening

Published:2015-10 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Integrated Reliability Workshop (IIRW)
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Author:

Kopley T.E.,Ring M.,Choi C.,Colbath J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7430433/7437006/07437087.pdf?arnumber=7437087

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation on gate oxide reliability under gate bias screening for commercial SiC planar and trench MOSFETs;Materials Science in Semiconductor Processing;2024-05

2. Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

3. Thick gate oxide extrinsic breakdown – The potential role of neutral hydrogen atom;Power Electronic Devices and Components;2023-03

4. Reliability and robustness of SiC power devices - how to ensure the quality level established in the silicon world;2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia);2022-05-15

5. Improving the reliability of MOS capacitor on 4H-SiC (0001) with phosphorus diffused polysilicon gate;Semiconductor Science and Technology;2022-04-07

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