Thick gate oxide extrinsic breakdown – The potential role of neutral hydrogen atom

Author:

Cheung Kin PORCID

Publisher

Elsevier BV

Reference31 articles.

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5. Modeling early breakdown failures of gate oxide in SiC power MOSFETs;Chbili;IEEE Transactions on Electron Devices,2016

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A non-defect precursor gate oxide breakdown model;Journal of Applied Physics;2023-06-16

2. V-Ramp test and gate oxide screening under the “lucky” defect model;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

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