Real-time electrical measurements during laser attack on STT-MRAM
Author:
Affiliation:
1. Aix-Marseille Université,IM2NP, CNRS, UMR 7334, 5 rue Enrico Fermi,Marseille,France,13397
2. SPINTEC, University Grenoble Alpes,CNRS, CEA, SPINTEC,Grenoble,France,38000
3. Mines Saint-Etienne, CEA, Leti, Centre CMP,Gardanne,France,13541
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10094038/10094053/10094166.pdf?arnumber=10094166
Reference22 articles.
1. Impact of a Laser Pulse on a STT-MRAM Bitcell: Security and Reliability Issues
2. Ablation in Externally Applied Electric and Magnetic Fields
3. Dual Detection of Heating and Photocurrent attacks (DDHP) Sensor using Hybrid CMOS/STT-MRAM
4. Phenomenological modelling of non-volatile memory threshold voltage shift induced by nonlinear ionization with a femtosecond laser;chiquet;Scientific Reports,2019
5. Real-Time Switching Dynamics in STT-MRAM
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1. Enhancing Security and Power Efficiency of Ascon Hardware Implementation with STT-MRAM;Electronics;2024-09-04
2. Correlation between 1064 nm laser attack and thermal behavior in STT-MRAM;Microelectronics Reliability;2023-11
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