Correlation between 1064 nm laser attack and thermal behavior in STT-MRAM-Reference-Cited by-同舟云学术

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Correlation between 1064 nm laser attack and thermal behavior in STT-MRAM

Published:2023-11 Issue: Volume:150 Page:115167
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Yazigy N.,Postel-Pellerin J.,Marca V. Della,Sousa R.C.,Di Pendina G.,Canet P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. MRAM: from STT to SOT, for security and memory;Kharbouche-Harrari,2018

2. After hard drives—what comes next?;Kryder;IEEE Trans. Magn.,2009

3. Physicochemical origin of improvement of magnetic and transport properties of STT-MRAM cells using tungsten on FeCoB storage layer;Chatterjee;Appl. Phys. Lett.,2019

4. Magnetoresistive random access memory;Apalkov;Proc. IEEE,2016

5. Real-time switching dynamics in STT-MRAM;Yazigy;IEEE J. Electron Devices Soc.,2022

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