Phenomenological modelling of non-volatile memory threshold voltage shift induced by nonlinear ionization with a femtosecond laser-Reference-Cited by-同舟云学术

Phenomenological modelling of non-volatile memory threshold voltage shift induced by nonlinear ionization with a femtosecond laser

Published:2019-05-14 Issue:1 Volume:9 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Chiquet Philippe^ORCID,Chambonneau Maxime^ORCID,Della Marca Vincenzo,Postel-Pellerin Jérémy,Canet Pierre,Souiki-Figuigui Sarra,Idda Guillaume,Portal Jean-Michel,Grojo David

Funder

A*MIDEX project

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-019-43344-x.pdf

Reference44 articles.

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3. Zavedeev, E. V., Kononenko, V. V. & Konov, V. I. Delocalization of femtosecond laser radiation in crystalline Si in the mid-IR range. Laser Phys. 26, 016101, https://doi.org/10.1088/1054-660X/26/1/016101 (2015).

4. Gai, X. et al. Nonlinear absorption and refraction in crystalline silicon in the mid-infrared. Laser Photonics Rev. 7, 1054–1064, https://doi.org/10.1002/lpor.201300103 (2013).

5. Jiang, L. & Tsai, H. L. Energy transport and material removal in wide bandgap materials by a femtosecond laser pulse. Int. J. Heat Mass Transfer 48, 487–499, https://doi.org/10.1016/j.ijheatmasstransfer.2004.09.016 (2005).

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