High Reliability 808nm Laser Diodes With Output Power Over 19W Under CW Operation
Author:
Affiliation:
1. College of Electronics and Information Engineering, Sichuan University, Chengdu, China
2. Suzhou Everbright Photonics Company Ltd., Suzhou, China
Funder
National Key Research and Development Program of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/68/9729093/09729249.pdf?arnumber=9729249
Reference20 articles.
1. Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes
2. Effect of carrier loss through waveguide layer recombination on the internal quantum efficiency in large-optical-cavity laser diodes
3. What Causes the Pulse Power Saturation of GaAs-Based Broad-Area Lasers?
4. Non-uniform longitudinal current density induced power saturation in GaAs-based high power diode lasers
5. High-power Al-free coherent and incoherent diode lasers
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