Non-uniform longitudinal current density induced power saturation in GaAs-based high power diode lasers
Author:
Affiliation:
1. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2. Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, California 94550, USA
Funder
U. S. Department of Energy by Lawrence Livermore National Laboratory
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0020259
Reference22 articles.
1. Efficient High-Power Laser Diodes
2. Theoretical and experimental investigations of the limits to the maximum output power of laser diodes
3. Impact of Carrier Nonpinning Effect on Thermal Power Saturation in GaAs-Based High Power Diode Lasers
4. High d/gamma values in diode laser structures for very high power
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