A 4GHz, low latency TCAM in 14nm SOI FinFET technology using a high performance current sense amplifier for AC current surge reduction-Reference-Cited by-同舟云学术

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A 4GHz, low latency TCAM in 14nm SOI FinFET technology using a high performance current sense amplifier for AC current surge reduction

Published:2015-09 Issue: Volume: Page:
ISSN:
Container-title:ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)
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Author:

Fritsch Alexander,Kugel Michael,Sautter Rolf,Wendel Dieter,Pille Jurgen,Torreiter Otto,Kalyanasundaram Shankar,Dobson Daniel A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7300343/7313811/07313897.pdf?arnumber=7313897

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. NoC simulation steered by NEST: McAERsim and a Noxim patch;Frontiers in Neuroscience;2024-06-20

2. Design of High-Performance and Compact CAM for Supporting Data-Intensive Applications;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19

3. A New 1C1T1R nv-TCAM with Simultaneously Hybrid Ferroelectricity and Memristor Layers Feasible for Ultra-highly-dense and High-performance In-memory-searching;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

4. A Nonvolatile Ternary-Content-Addressable- Memory Comprising Resistive-Gate Field-Effect Transistors;IEEE Electron Device Letters;2023-08

5. Compact and High-Performance TCAM Based on Scaled Double-Gate FeFETs;2023 60th ACM/IEEE Design Automation Conference (DAC);2023-07-09

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