Compact and High-Performance TCAM Based on Scaled Double-Gate FeFETs-Reference-Cited by-同舟云学术

Compact and High-Performance TCAM Based on Scaled Double-Gate FeFETs

Published:2023-07-09 Issue: Volume: Page:
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Container-title:2023 60th ACM/IEEE Design Automation Conference (DAC)
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Author:

Liu Liu¹,Kumar Shubham²,Thomann Simon²,Amrouch Hussam²,Hu Xiaobo Sharon¹

Affiliation:

1. University of Notre Dame,Department of Computer Science and Engineering,USA

2. University of Stuttgart,Chair of Semiconductor Test and Reliability (STAR),Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10247654/10247655/10247849.pdf?arnumber=10247849

Reference27 articles.

1. An Ultra-Dense 2FeFET TCAM Design Based on a Multi-Domain FeFET Model

2. Design of magnetic non-volatile tcam with prioritydecision in memory technology for high speed, low power, and high reliability;wang;IEEE TCASI,2020

3. Eva-CAM: A Circuit/Architecture-Level Evaluation Tool for General Content Addressable Memories

4. Energy-Aware Designs of Ferroelectric Ternary Content Addressable Memory

5. 1 mb 0.41 µm² 2t-2r cell nonvolatile tcam with two-bit encoding and clocked self-referenced sensing;li;IEEE JSSC,2014

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