A New 1C1T1R nv-TCAM with Simultaneously Hybrid Ferroelectricity and Memristor Layers Feasible for Ultra-highly-dense and High-performance In-memory-searching
Author:
Affiliation:
1. National Central University,Department of Electrical engineering,Taoyuan city,Taiwan
2. Stanford University,Dept. of Electrical Engineering,Stanford,CA,USA
Funder
National Science and Technology Council
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10511270/10511310/10512294.pdf?arnumber=10512294
Reference11 articles.
1. A 4GHz, low latency TCAM in 14nm SOI FinFET technology using a high performance current sense amplifier for AC current surge reduction
2. A 28mn 320Kb TCAM Macro with Sub-0.8ns Search Time and 3.5+x Improvement in Delay-Area-Energy Product using Split-Controlled Single-Load 14T Cell
3. A Nonvolatile Ternary-Content-Addressable- Memory Comprising Resistive-Gate Field-Effect Transistors
4. Design of a Compact Spin-Orbit-Torque-Based Ternary Content Addressable Memory
5. 3-bits-per-cell 2T32CFE nvTCAM by Angstrom-laminated Ferroelectric Layers with 10¹¹ Cycles of Endurance and 4.92V of Ultra-wide Memory-windows for In-memory-searching
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