A case study on severe yield loss caused by wafer arcing in BEOL manufacturing

Author:

Lee Hong-Ji,Yu Hsu-Sheng,Lee Shih-Chin,Yang Chih-Kai,Chang Shao-En,Lo Kuo-Feng,Lin Xin-Guan,Lian Nan-Tzu,Yang Tahone,Chen Kuang-Chao

Publisher

IEEE

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Elimination of Bond Pad Etch Induced Wafer Arcing via Reducing ESC Chuck Surface Charges;2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2024-05-13

2. A Case of Plasma-Induced Film Breakdown in 3D NAND BEOL Dielectric Etch;2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2024-05-13

3. Common Source Line-to-Word Line Short Improvement by Eliminating SLT Sidewall Notch in 3D NAND Deep Trench Patterning;2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2023-05-01

4. Improvement of Twisting and Line-Edge Roughness of 3D NAND Deep Trench Etching on Yield Enhancement : AEPM: Advanced Equipment Processes and Materials;2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2022-05-02

5. Study on Wafer De-Chuck for High Aspect Ratio Etch Process;2019 China Semiconductor Technology International Conference (CSTIC);2019-03

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