Improvement of Twisting and Line-Edge Roughness of 3D NAND Deep Trench Etching on Yield Enhancement : AEPM: Advanced Equipment Processes and Materials
Author:
Affiliation:
1. Technology Development Center,Macronix International Co., Ltd.,Hsinchu 300,Taiwan ROC
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9792471/9792473/09792529.pdf?arnumber=9792529
Reference6 articles.
1. Study of Plasma Arcing Mechanism in High Aspect Ratio Slit Trench Etching
2. A case study on severe yield loss caused by wafer arcing in BEOL manufacturing
3. Control of ion energy and angular distributions in dual-frequency capacitively coupled plasmas through power ratios and phase: Consequences on etch profiles
4. Ion energy-angle distribution functions at the plasma-material interface in oblique magnetic fields
5. Pattern dependent plasma charging effect in high aspect ratio 3D NAND architecture
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