A Case of Plasma-Induced Film Breakdown in 3D NAND BEOL Dielectric Etch-Reference-Cited by-同舟云学术

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A Case of Plasma-Induced Film Breakdown in 3D NAND BEOL Dielectric Etch

Published:2024-05-13 Issue: Volume: Page:1-4
ISSN:
Container-title:2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
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Author:

Liang Ying-Hung¹,Chiu Yuan-Chieh¹,Yang Zusing¹,Lee Hong-Ji¹,Lian Nan-Tzu¹,Yang Tahone¹,Chen Kuang-Chao¹,Lu Chih-Yuan¹

Affiliation:

1. Macronix International Co., Ltd., Technology Development Center,Hsinchu,Taiwan,ROC,300

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10545359/10545360/10545363.pdf?arnumber=10545363

Reference4 articles.

1. Reviewing the Evolution of the NAND Flash Technology

2. A case study on severe yield loss caused by wafer arcing in BEOL manufacturing

3. Study of Plasma Arcing Mechanism in High Aspect Ratio Slit Trench Etching

4. Backend dielectric etch induced wafer arcing mechanism and solution

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