Monolithic Integration of GaN Nanowire Light-Emitting Diode With Field Effect Transistor-Reference-Cited by-同舟云学术

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Monolithic Integration of GaN Nanowire Light-Emitting Diode With Field Effect Transistor

Published:2019-03 Issue:3 Volume:40 Page:427-430
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Hartensveld Matthew^ORCID,Zhang Jing^ORCID

Funder

Office of Naval Research

National Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielaam/55/8660643/8629013-aam.pdf

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Progress in III‐Nitride Tunnel Junction Light‐Emitting Diodes;physica status solidi (RRL) – Rapid Research Letters;2024-02-03

2. Monolithically and Vertically Integrated LED-on-FET Device Based on a Novel GaN Epitaxial Structure;IEEE Transactions on Electron Devices;2023-12

3. Effective Integration of Suspended Membrane Light-Emitting Diode with E-Mode MOSFET on GaN-on-Si LED Epi Wafer;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

4. Monolithic integrated all-GaN-based µLED display by selective area regrowth;Optics Express;2023-09-06

5. GaN and AlGaN/AlN Nanowire Ensembles for Ultraviolet Photodetectors: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture;ACS Applied Nano Materials;2023-07-13

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