A 10-W High-Power Amplifier Using Input Nonlinearity for K-Band Satcom Applications
Author:
Affiliation:
1. Key Laboratory of Wide Bandgap Semiconductor Materials, Ministry of Education, Xidian University, Xi’an, China
2. China Academy of Space Technology (Xi’an), Xi’an, China
Funder
National Key Research and Development Program of China
China Postdoctoral Science Foundation
Science and Technology Major Project of Shaanxi Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/9816061/09737310.pdf?arnumber=9737310
Reference23 articles.
1. Analysis of Class-F Power Amplifiers With a Second-Harmonic Input Voltage Manipulation
2. Investigation of a Class-J Mode Power Amplifier in Presence of a Second-Harmonic Voltage at the Gate Node of the Transistor
3. Investigation of Input–Output Waveform Engineered Continuous Inverse Class F Power Amplifiers
4. Comprehensive Analysis of Input Waveform Shaping for Efficiency Enhancement in Class B Power Amplifiers
5. Input Harmonic Sensitivity in High-Efficiency GaN Power Amplifiers
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