A 120–140-GHz LNA in 250-nm InP HBT
Author:
Affiliation:
1. imec USA Nanoelectronics Design Center, Kissimmee, FL, USA
2. imec, Leuven, Belgium
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/9941011/09831185.pdf?arnumber=9831185
Reference15 articles.
1. 180 GHz HBT MMIC amplifier with 80 GHz bandwidth and low noise figure in 250 nm InP;stärke;Proc Eur Microw Conf Central Eur (EuMCE),2019
2. A D-Band LNA Using a 22 nm FD-SOI CMOS Technology for Radar Applications
3. A SiGe HBT $D$ -Band LNA With Butterworth Response and Noise Reduction Technique
4. D-band low-noise amplifier MMIC with 50 % bandwidth and 3.0 dB noise figure in 100 nm and 50 nm mHEMT technology
5. Low noise amplifier for 180 GHz frequency band
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1. Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs;Micromachines;2023-11-08
2. A 110–170 GHz Wideband LNA Design Using the InP Technology for Terahertz Communication Applications;Micromachines;2023-10-10
3. Design of a 110GHz to 170GHz terahertz wideband Low Noise Amplifier Chip;2023 24th International Vacuum Electronics Conference (IVEC);2023-04-25
4. Beyond the Bandwidth Limit: A Tutorial on Low-Noise Amplifier Circuits for Advanced Systems Based on III-V Process;IEEE Transactions on Circuits and Systems II: Express Briefs;2023
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