Design of a 110GHz to 170GHz terahertz wideband Low Noise Amplifier Chip-Reference-Cited by-同舟云学术

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Design of a 110GHz to 170GHz terahertz wideband Low Noise Amplifier Chip

Published:2023-04-25 Issue: Volume: Page:
ISSN:
Container-title:2023 24th International Vacuum Electronics Conference (IVEC)
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Author:

Hu Lian¹,Yang Ziqiang¹,Tong Qinwen¹,Li Qingfeng¹,Liang Dan¹,Zhang Yaxin²

Affiliation:

1. Yangtze Delta Region Institute of University of Electronic Science and Technology of China, Huzhou University of Electronic Science and Technology of China,Chengdu Huzhou,China

2. University of Electronic Science and Technology of China,Chengdu Chengdu,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10156868/10156872/10157195.pdf?arnumber=10157195

Reference4 articles.

1. A 120–140-GHz LNA in 250-nm InP HBT

2. Highly Linear D-Band Low-Noise Amplifier with 8.5dB Noise Figure in InP-DHBT Technology

3. A wide-bandwidth W-band LNA in InP/Si BiCMOS technology

4. State of the art MMIC InP LNA Realizations and applications in FARADAY array receivers

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