A Small-Signal GFET Equivalent Circuit Considering an Explicit Contribution of Contact Resistances-Reference-Cited by-同舟云学术

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A Small-Signal GFET Equivalent Circuit Considering an Explicit Contribution of Contact Resistances

Published:2021-01 Issue:1 Volume:31 Page:29-32
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Pacheco-Sanchez Anibal^ORCID,Ramos-Silva Javier N.^ORCID,Ramirez-Garcia Eloy^ORCID,Jimenez David^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/9311259/09263362.pdf?arnumber=9263362

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions;IEEE Transactions on Electron Devices;2023-11

2. Extending the Small-Signal Modeling of GFETs to Ambipolarity Regime;2023 14th Spanish Conference on Electron Devices (CDE);2023-06-06

3. Graphene-based materials and their applications in electrolyte-gated transistors for sensing;Synthetic Metals;2023-05

4. Straightforward bias- and frequency-dependent small-signal model extraction for single-layer graphene FETs;Microelectronics Journal;2023-03

5. A Lightweight, Zero-Power Intermodulation Sensor Based on the Graphene Oscillator;IEEE Sensors Journal;2023-02-01

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