Straightforward bias- and frequency-dependent small-signal model extraction for single-layer graphene FETs

Author:

Mavredakis NikolaosORCID,Pacheco-Sanchez Anibal,Wei Wei,Pallecchi Emiliano,Happy HenriORCID,Jiménez David

Funder

España Ministerio de Ciencia Innovación y Universidades

Horizon 2020

ERDF

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Graphene-based microwave circuits: a review;Saeed;Adv. Mater.,2021

2. GHz maximum oscillation frequency in CVD graphene radio frequency transistors;Wu;ACS Appl. Mater. Interfaces,2016

3. Graphene field-effect transistors with high extrinsic fT and fmax;Bonmann;IEEE Electron. Device Lett.,2019

4. Enhanced high-frequency performance of top-gated graphene FETs due to substrate-induced improvements in charge carrier saturation velocity;Asad;IEEE Trans. Electron. Dev.,2021

5. An MOS transistor model for RF IC design valid in all regions of operation;Enz;IEEE Trans. Microw. Theor. Tech.,2002

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