High-speed Graded-channel GaN HEMTs with Linearity and Efficiency
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/9212188/9223768/09223775.pdf?arnumber=9223775
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fermi-Level Pinning Effect in Gate Region: A Case Study of Multimetal Gated AlGaN/GaN HEMT for High RF Linearity;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03
2. N-Polar GaN MISHEMT With Bias-Insensitive Linearity at 30 GHz;IEEE Microwave and Wireless Technology Letters;2024-03
3. A review on GaN HEMTs: nonlinear mechanisms and improvement methods;Journal of Semiconductors;2023-12-01
4. Impact of Source Resistance on Linearity of AlGaN/GaN HEMTs at Ka-Band;ECS Journal of Solid State Science and Technology;2023-10-01
5. A Ka-Band InP HBT MMIC Power Amplifier With 19.8:1 IP3/Pdc LFOM at 48 GHz;IEEE Journal of Solid-State Circuits;2023-09
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