More Moore
Author:
Affiliation:
1. Qualcomm
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9827484/9827525/09827527.pdf?arnumber=9827527
Reference52 articles.
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2. 6F2 buried wordline DRAM cell for 40 nm and beyond;schloesser;IEDM,2008
3. Setting up 3D sequential integration for back-illuminated CMOS image sensors with highly miniaturized pixels with low temperature fully depleted SOI transistors
4. 3-D Sequential Integration: A Key Enabling Technology for Heterogeneous Co-Integration of New Function With CMOS
5. High performance polysilicon nanowire NEMS for CMOS embedded nanosensors
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