Beyond Si-Based CMOS Devices: Needs, Opportunities, and Challenges
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-97-4623-1_1
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4. Auth C et al (2017) A 10nm high performance and low-power CMOS technology featuring 3rd-generation fin FET transistors, self-aligned quad patterning, contact overactive gate and Cobalt local interconnects. In: IEDM, Session 2.9
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