Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductors-Reference-Cited by-同舟云学术

Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductors

Published:2023-08-03 Issue:9 Volume:22 Page:1078-1084
ISSN:1476-1122
Container-title:Nature Materials
language:en
Short-container-title:Nat. Mater.

Author:

Xu Yongshan,Liu Teng,Liu Kailang^ORCID,Zhao Yinghe^ORCID,Liu Lei,Li Penghui,Nie Anmin,Liu Lixin,Yu Jun,Feng Xin,Zhuge Fuwei^ORCID,Li Huiqiao^ORCID,Wang Xinran^ORCID,Zhai Tianyou^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://www.nature.com/articles/s41563-023-01626-w.pdf

Reference62 articles.

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3. Das, S. et al. Transistors based on two-dimensional materials for future integrated circuits. Nat. Electron. 4, 786–799 (2021).

4. Desai, S. B. et al. MoS2 transistors with 1-nanometer gate lengths. Science 354, 99–102 (2016).

5. Wu, F. et al. Vertical MoS2 transistors with sub-1-nm gate lengths. Nature 603, 259–264 (2022).

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