Realizing and and or Functions With Single Vertical-Slit Field-Effect Transistor-Reference-Cited by-同舟云学术

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Realizing and and or Functions With Single Vertical-Slit Field-Effect Transistor

Published:2012-02 Issue:2 Volume:33 Page:152-154
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kamath Aashit,Chen Zhixian,Shen Nansheng,Singh Navab,Lo G. Q.,Kwong Dim-Lee,Kasprowicz Dominik,Pfitzner Andrzej,Maly Wojciech

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6138595/06112177.pdf?arnumber=6112177

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2. VES-BJT: A Lateral Bipolar Transistor on SOI with Polysilicon Emitter and Collector;Electronics;2023-04-15

3. Realization of high-speed logic functions using heterojunction vertical TFET;Applied Physics A;2023-02-04

4. Solution-Processed p-Type CuI Thin-Film Transistors With NAND Logic Function;IEEE Transactions on Electron Devices;2022-11

5. Design and Realization of Logic Gates or Functions Using Vertical TEFT Structures;Silicon;2022-03-05

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