Author:
Rahaman Mirwaiz,Banerji Pallab
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference28 articles.
1. Park DG, Cha TH, Lim KY, Cho HJ, Kim TK, Jang SA, Suh YS, Misra V, Yeo IS, Roh JS, Park JW, Yoon HK (2001) Robust ternary metal gate electrodes for dual gate CMOS devices. In: IEDM Tech Dig, pp 616–619
2. Polishchuk I, Ranade P, King TJ, Hu C (2002) Dual work function metal gate CMOS transistors by Ni–Ti interdiffusion. IEEE Electron Device Lett 23:200–202
3. Wong CY, Sun JYC, Taur Y, Oh CS, Angelucci R, Davari B (1988) Doping of n and p polysilicon in a dual-gate process. In: IEDM Tech Dig, pp 238–241
4. Pfiester JR, Baker FK, Mele TC, Tseng HH, Tobin PJ, Hayden JD, Miller JW, Gunderson CD, Parrillo LC (1990) The effects of boron penetration on p polysilicon gates MOS devices. IEEE Trans Electron Devices 37:1842–1851
5. Mookerjea S, Krishnan R, Datta S, Narayanan V (2009) Effective capacitance and drive current for tunnel FET (TFET) CV/I estimation. IEEE Trans Electron Devices 56(9):2092–2098. https://doi.org/10.1109/TED.2009.2026516
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