Impact of Fin Doping and Gate Stack on FinFET (110) and (100) Electron and Hole Mobilities-Reference-Cited by-同舟云学术

Impact of Fin Doping and Gate Stack on FinFET (110) and (100) Electron and Hole Mobilities

Published:2012-03 Issue:3 Volume:33 Page:351-353
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Akarvardar Kerem,Young Chadwin D.,Baykan Mehmet O.,Ok Injo,Ngai Tat,Ang Kah-Wee,Rodgers Martin P.,Gausepohl Steven,Majhi Prashant,Hobbs Chris,Kirsch Paul D.,Jammy Raj

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6155120/06148253.pdf?arnumber=6148253

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