1. Considerations for Ultimate CMOS Scaling
2. The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
3. Sensitivity of double-gate and finfet devices to process variations
4. X. Huang, W.-C. Lee, C. Kuo, D. Hisamoto, L. Chang, J. Kedzierski, E. Anderson, H. Takeuchi, Y.-K. Choi, and K. Asano, in International Electron Devices Meeting, IEDM’99, Technical Digest (IEEE, 1999), pp. 67–70.
5. M. Guillorn, J. Chang, A. Bryant, N. Fuller, O. Dokumaci, X. Wang, J. Newbury, K. Babich, J. Ott, B. Haran, R. Yu, C. Lavoie, D. Klaus, Y. Zhang, E. Sikorski, W. Graham, B. To, M. Lofaro, J. Tornello, D. Koli, B. Yang, A. Pyzyna, D. Neumeyer, M. Khater, A. Yagishita, H. Kawasaki, and W. Haensch, in 2008 Symposium on VLSI Technology (IEEE, Honolulu, HI, 2008), pp. 12–13.