Multidimensional Discretization of the Stationary Quantum Drift-Diffusion Model for Ultrasmall MOSFET Structures-Reference-Cited by-同舟云学术

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Multidimensional Discretization of the Stationary Quantum Drift-Diffusion Model for Ultrasmall MOSFET Structures

Published:2004-06 Issue:6 Volume:23 Page:837-842
ISSN:0278-0070
Container-title:IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
language:en
Short-container-title:IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

Author:

Odanaka S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Software

Link

http://xplorestaging.ieee.org/ielx5/43/28935/01302185.pdf?arnumber=1302185

Cited by 57 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of quantum confinement in nanosheet FETs by using a quantum drift diffusion model;Electronics and Communications in Japan;2023-02-08

2. Analysis of Quantum Confinement in Nanosheet FETs by Using a Quantum Drift Diffusion Model;IEEJ Transactions on Electronics, Information and Systems;2022-11-01

3. Learning Quantum Drift-Diffusion Phenomenon by Physics-Constraint Machine Learning;IEEE/ACM Transactions on Networking;2022-10

4. Analysis of saturation velocity and energy relaxation time of electrons in Si using full‐band Monte Carlo simulation;Electrical Engineering in Japan;2020-06

5. Analysis of nonequilibrium phenomena on electric characteristics of advanced MOSFETs by using a quantum energy transport model;Electrical Engineering in Japan;2020-06

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