Affiliation:
1. Graduate School of Science and Technology Kyoto Institute of Technology Kyoto Japan
Abstract
AbstractIn this paper, we have analyzed quantum confinement effects in nanosheet MOSFETs by using a quantum drift‐diffusion (QDD) model. The QDD model is a device simulator which allows to simulate quantum confinement effects in the inversion layer for advanced MOSFETs. The quantum confinement effects in nanosheets have been analyzed by comparing the simulation results by QDD and drift‐diffusion (DD) model. The drain current ratio of DD to QDD is 250.1% at VG = 0.5 V and 180.1% at VG = 0 V. While the maximum electron density of DD exists at the interface between the insulator and the silicon sheet, that of QDD goes to near the center of the silicon sheet. The electron areal density ratio of DD to QDD is 118.3% in the direction of the 10 nm width of the silicon sheet and 176.9% in the direction of the 4 nm width.
Subject
Applied Mathematics,Electrical and Electronic Engineering,Computer Networks and Communications,General Physics and Astronomy,Signal Processing