Reliability issues of MOS and bipolar ICs

Author:

Hu C.

Publisher

IEEE Comput. Soc. Press

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effects of NBTI On PMOS Device With Technology Scaling;2022 IEEE 13th Annual Ubiquitous Computing, Electronics & Mobile Communication Conference (UEMCON);2022-10-26

2. Reliability prediction of semiconductor devices using modified physics of failure approach;International Journal of System Assurance Engineering and Management;2013-02-14

3. Design considerations for CMOS digital circuits with improved hot-carrier reliability;IEEE Journal of Solid-State Circuits;1996-07

4. Transition density: a new measure of activity in digital circuits;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;1993

5. Bum-in;Microelectronics Manufacturing Diagnostics Handbook;1993

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