Research on simulation of Cu/SiO<sub>2</sub> hybrid bonding process and interface failure mechanism by Finite Element Analysis-Reference-Cited by-同舟云学术

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Research on simulation of Cu/SiO₂ hybrid bonding process and interface failure mechanism by Finite Element Analysis

Published:2023-08-08 Issue: Volume: Page:1-7
ISSN:
Container-title:2023 24th International Conference on Electronic Packaging Technology (ICEPT)
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Author:

Wang Haozhong¹,Chen Hongtao¹,Xiang Junshan¹,Yang Xiaofeng²

Affiliation:

1. Harbin Institute of Technology (Shenzhen),Sauvage Laboratory for Smart Materials,Shenzhen,China,518055

2. China Electronic Product Reliability and Environmental Testing Research Institute,The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,Guangzhou,China,510610

Funder

China Postdoctoral Science Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10491594/10491891/10492426.pdf?arnumber=10492426

Reference14 articles.

1. 3D Chip Stacking Technologies for the Future;Hirayama;IMPACT2019

2. An Overview of Patterned Metal/Dielectric Surface Bonding: Mechanism, Alignment and Characterization

3. Hybrid bonding for 3D stacked image sensors: impact of pitch shrinkage on interconnect robustness

4. Low Temperature Cu Interconnect with Chip to Wafer Hybrid Bonding

5. Experimental characterization and modeling of the mechanical properties of Cu–Cu thermocompression bonds for three-dimensional integrated circuits

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