Author:
Di Cioccio L.,Gueguen P.,Taibi R.,Landru D.,Gaudin G.,Chappaz C.,Rieutord F.,de Crecy F.,Radu I.,Chapelon L. L.,Clavelier L.
Abstract
An overview of the different metal bonding techniques used for 3D integration is presented. Key parameters such as surface preparation, temperature and duration of annealing, achievable wafer-to-wafer alignment and electrical results are reviewed. A special focus is done on direct bonding of patterned metal/dielectric surfaces. A mechanism for copper direct bonding is proposed based on bonding toughness measurements, SAM, XRR, XRD, and TEM analysis. Dedicated characterization techniques for such bonding are presented.
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Cited by
52 articles.
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