Single Transformer-Based Compact Doherty Power Amplifiers for 5G RF Phased-Array ICs-Reference-Cited by-同舟云学术

Single Transformer-Based Compact Doherty Power Amplifiers for 5G RF Phased-Array ICs

Published:2022-05 Issue:5 Volume:57 Page:1267-1279
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Park Hyun-Chul¹^ORCID,Kim Seokhyeon¹^ORCID,Lee Jooseok¹,Jung Junho¹^ORCID,Baek Seungjae¹,Kim Taewan¹,Kang Daehyun¹^ORCID,Minn Donggyu¹,Yang Sung-Gi¹

Affiliation:

1. Network Business Division, Samsung Electronics Company Ltd., Suwon, South Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/9761850/09716791.pdf?arnumber=9716791

Reference51 articles.

1. A fully matched N-way doherty amplifier with optimized linearity

2. Doherty's Legacy: A History of the Doherty Power Amplifier from 1936 to the Present Day

3. A 32 GHz 20 dBm-PSAT transformer-based Doherty power amplifier for multi-Gb/s 5G applications in 28 nm bulk CMOS;indirayanti;Proc IEEE Radio Freq Integr Circuits Symp (RFIC),2017

4. A 28-/37-/39-GHz Linear Doherty Power Amplifier in Silicon for 5G Applications

5. A Ka-Band Transformer-Based Doherty Power Amplifier for Multi-Gb/s Application in 90-nm CMOS

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