Single Transformer-Based Compact Doherty Power Amplifiers for 5G RF Phased-Array ICs
Author:
Affiliation:
1. Network Business Division, Samsung Electronics Company Ltd., Suwon, South Korea
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/4/9761850/09716791.pdf?arnumber=9716791
Reference51 articles.
1. A fully matched N-way doherty amplifier with optimized linearity
2. Doherty's Legacy: A History of the Doherty Power Amplifier from 1936 to the Present Day
3. A 32 GHz 20 dBm-PSAT transformer-based Doherty power amplifier for multi-Gb/s 5G applications in 28 nm bulk CMOS;indirayanti;Proc IEEE Radio Freq Integr Circuits Symp (RFIC),2017
4. A 28-/37-/39-GHz Linear Doherty Power Amplifier in Silicon for 5G Applications
5. A Ka-Band Transformer-Based Doherty Power Amplifier for Multi-Gb/s Application in 90-nm CMOS
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