A 28-/37-/39-GHz Linear Doherty Power Amplifier in Silicon for 5G Applications

Author:

Hu SongORCID,Wang FeiORCID,Wang HuaORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 116 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A Gallium Nitride (GaN) Doherty power amplifier chip design based on series RC stability network;International Journal of Circuit Theory and Applications;2023-12-26

2. Dual band power amplifier with adjustable transmission zeros based on the parallel and series two section transmission line;IEICE Electronics Express;2023-11-25

3. A 24-to-30 GHz Series-Doherty Power Amplifier With Novel Broadband Combiner Achieving 2.5% Back-off PAE Variation in 65-nm CMOS;ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC);2023-09-11

4. An 8-Element 5G Multistandard 28-/39-GHz Dual-Band, Dual-Polarized Phased Array for Compact Systems;IEEE Transactions on Microwave Theory and Techniques;2023-09

5. Research Progress of Silicon-Based Millimeter Wave Amplifiers;2023 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT);2023-08-14

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