Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition-Reference-Cited by-同舟云学术

Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition

Published:2021-04 Issue:4 Volume:56 Page:1116-1128
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Natsui Masanori^ORCID,Tamakoshi Akira^ORCID,Honjo Hiroaki^ORCID,Watanabe Toshinari,Nasuno Takashi,Zhang Chaoliang,Tanigawa Takaho,Inoue Hirofumi,Niwa Masaaki,Yoshiduka Toru,Noguchi Yasuo,Yasuhira Mitsuo,Ma Yitao^ORCID,Shen Hui,Fukami Shunsuke^ORCID,Sato Hideo^ORCID,Ikeda Shoji^ORCID,Ohno Hideo^ORCID,Endoh Tetsuo^ORCID,Hanyu Takahiro

Funder

ImPACT Program of CSTI

STT-MRAM Research and Development program under the Industry-Academic collaboration of the CIES consortium

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/9387173/09288784.pdf?arnumber=9288784

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