Author:
Jiang Chuanpeng,Li Jinhao,Zhang Hongchao,Lu Shiyang,Li Pengbin,Wang Chao,Zhang Zhongkui,Hou Zhengyi,Liu Xu,Feng Jiagao,Zhang He,Jin Hui,Wang Gefei,Liu Hongxi,Cao Kaihua,Wang Zhaohao,Zhao Weisheng
Abstract
Abstract
We have successfully demonstrated a 1 Kb spin-orbit torque (SOT) magnetic random-access memory (MRAM) multiplexer (MUX) array with remarkable performance. The 1 Kb MUX array exhibits an in-die function yield of over 99.6%. Additionally, it provides a sufficient readout window, with a TMR/R
P_sigma% value of 21.4. Moreover, the SOT magnetic tunnel junctions (MTJs) in the array show write error rates as low as 10−6 without any ballooning effects or back-hopping behaviors, ensuring the write stability and reliability. This array achieves write operations in 20 ns and 1.2 V for an industrial-level temperature range from −40 to 125 °C. Overall, the demonstrated array shows competitive specifications compared to the state-of-the-art works. Our work paves the way for the industrial-scale production of SOT-MRAM, moving this technology beyond R&D and towards widespread adoption.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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